Analytical Model for the Threshold Voltage Variability due to Random Dopant Fluctuations in Junctionless FETs
نویسندگان
چکیده
An analytical model of the threshold voltage variance induced by random dopant fluctuations (RDF) in junctionless (JL) FETs is derived for both cylindrical nanowire (NW) and planar double-gate (DG) structures considering only the device electrostatics in subthreshold. The model results are shown to be in reasonable agreement with TCAD simulations for different gate lengths and device parameters. The results confirm previous indications that the threshold voltage fluctuations are a serious concern for nanometer-scale JL FETs. FET; junctionless; nanowire; double-gate; random dopant fluctuations; threshold voltage variability
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